IRF540 MOSFET N-CH 100V 33A TO-220AB
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Specifications: • VDSS = 100V • RDS(on) = 26.5mOhm • ID = 36A.