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Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Specifications: • VDSS = 100V • RDS(on) = 26.5mOhm • ID = 36A.
Warning: California residents only. Please note per Proposition 65 that this product contains chemicals known to the State of California to cause cancer and birth defects or other reproductive harm.
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